University of Calcutta

INSTITUTE OF RADIO PHYSICS AND ELECTRONICS (IRPE)

Anirban Bhattacharyya

Assistant Professor

Address

  • Institute of Radio Physics and Electronics
  • University of Calcutta
  • 92 Acharya Prafulla Chandra Road
  • Kolkata 700 009
  • West Bengal, India

anirban1@gmail.com

PRIMARY RESEARCH AREA

Research Areas: Crystal growth and Epitaxy Semiconductor Device Fabrication Instrumentation Microfluidics and Microelectromechanical Devices

RESEARCH INTEREST

    More information

    http://cu-nitides.webnode.in/

    Profile

    Selected Publications

      1. “Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency” A. Bhattacharyya, T. D. Moustakas, Lin Zhou,David. J. Smith and W. Hug, Appl. Phys. Lett. 94, 181907 (2009)

      2. "Real-Time X-Ray Studies of Gallium Nitride Nanodot Formation by Droplet Heteroepitaxy" Yiyi Wang, Ahmet Ozcan, Christopher Sanborn, Karl Ludwig, Anirban Bhattacharyya, Ramya Chandrasekaran, Theodore Moustakas, Lin Zhou, and David Smith, J. of Appl. Phys. 102, 073522 (2007).

      3. “High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy” J. S. Cabalu, A.Bhattacharyya, C. Thomidis, I. Friel, T. D. Moustakas, C. J. Collins, and Ph. Komninou J. Appl. Phys. 100, 104506 (2006)

      4. “Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy” Yiyi Wang, Ahmet S.Özcan, Karl F. Ludwig, Jr., Anirban Bhattacharyya, T. D. Moustakas, Lin Zhou, and David J. Smith Appl. Phys. Lett. 88, 181915 (2006)

      5. “Efficient P-type Doping of GaN films by Plasma- assisted Molecular Beam Epitaxy” A. Bhattacharyya, W. Li, J. Cabalu, T. D.Moustakas, David J. Smith and R. L. Hervig, Appl. Phys. Lett. 85, 4956 (2004)